Program

Nov. 17th
1500 - 1700 Registration at the ANA Hotel lobby)
Nov. 18th
0830 - 0900 Registration at the International Conference Center Hiroshima
0900 - 0910 Opening remarks [Chair : Dr. HASHIMOTO Satoshi]
Dr. YOSHIHARA Kazuhiro [NIMS]
Dr. MOON Dae Won [KRISS]
0910 - 1000 Session 1 Standardization 1 2presentation) [Chair : Dr. LEE Jae Cheol, Dr. HASHIMOTO Satoshi]
0910 - 0935 AZUMA Yasushi NMIJ, AIST Thickness measurement by GIXRR and XPS for establishment of thin film standard
0935 - 1000 YOSHIHARA Kazuhiro NIMS Common Data Processing System Version 7
1000 - 1010 Coffee break
1010 - 11:50 Session 2  Standardization 2 (5 presentation) [Chair : Dr. PARK Yong-Sup, Dr. MIURA Kaoru]
1010 - 1035 SUZUKI Mineharu NTT AT Corp. Development of Sample Holder for Surface Degradation Estimation during XPS Measurement
1035 - 1100 TOHMA Hajime NISSAN ARC LTD. Study of Degradation during XPS using New Holders
1100 - 1125 TANUMA Shigeo NIMS Development of evaluation method of specimen damage due to electron irradition on AES analysis
1125 - 1150 KANG Hee Jae Chungbuk National Univ. Damage distribution in Si surface by low energy Ar ion sputtering
1150 - 1215 HASHIMOTO Satoshi Kokankeisoku K.K. Change of Ti2p XPS spectrum for Titanium Oxide by Ar Ion Bombardment
1215 - 1325 Lunch
1325 - 1540 Session3 Standardization 3 5presentation) [Chair : Dr. LEE Jong-Wan, Dr. ABE Yoshimi]
1325 - 1350 KIM Kyung-Joong KRISS Certified Reference Materials for SIMS Depth Profiling
1350 - 1415 HOMMA Yoshikazu NTT Basic Research Lab. Evaluation of BN-delta-doped multilayers as the reference material for SIMS shallow depth profiling
1415 - 1450 KIM Hyun Kyong KRISS Report of SIMS depth profiling RRT in Korea with delta BN multilayers in Si
1450 - 1515 MOON Dae Won KRISS Standardization of shallow junction profiling with MEIS and low energy SIMS
1515 - 1540 LEE Jong-Wan Hallym Univ. SIMS deconvolution of delta layers in silicon
1540 - 1555 Coffee break
1555 - 1710 Session 4 Practical Applications and Instrumentation (3 presentation)1 [Chair : Dr. LEE Yeonhee, Dr. FUKUSHIMA Sei]
1555 - 1620 CHOI Il-Sang HYNIX Semiconductor Inc. Characterization of interface between Al2O3/Si using X-ray photoelectron spectroscopy
1620 - 1645 IIDA Shin-ichi Osaka Univ. Surface Properties of Sc-O/W(100) System as Emitter at Room and High Temperatures
1645 - 1710 CHO Chae-Ryong Korea Basic Science Institute Elemental distribution measurement of sol-gel processed metal oxide films using Auger scanning mapping technique
1710 - 1720 Official information [Secretary]
Nov. 19th
0830 - 0900 Registration at the International Conference Center Hiroshima
0900 - 1050 Session 5 Practical Applications and Instrumentation 25presentation) [Chair : Dr. KIM Kyung-Joong, Dr. TAKAHASHI Kazuhiro]
0900 - 0925 YANAGIUCHI Katsuaki TDK Corp. A Practical Procedure For Surface Protection of a Bulk Specimen in the Air
0925 - 0950 PARK Yong-Sup KRISS Alq3-based OLED with Al/fluoride Cathode: Performance Enhancement and Interface Electronic Structures
0950 - 1015 YASUFUKU Hideyuki NIMS Development of X-ray photo-emission electron microscopy (XPEEM) at SPring-8 BL15XU
1015 - 1040 LEE Yeon-Hee Korea Institute of Sci. and Tech. Surface Properties and Characterization of Plasma Source Ion Implantaion (PSII)-modified Polymers
1040 - 1105 TANAKA Akihiro ULVAC-PHI, Inc. Measurement of Angular Distribution Assymetry of Photoemission from SiO2
1105 - 1115 Closing remarks, Official Information) [Secretary]
Dr. TANUMA Sigeo
11:15 - 1225 Lunch
1300 - 1800 Excursion
1800 - 1900 Break ANA Hotel
1900 - 2100 Banquet ANA Hotel